Original J607 607 TO 263 P Channel MOSFED Field Effect Transistor

Original J607 607 TO 263 P Channel MOSFED Field Effect Transistor

DESCRIPTION

The 2SJ607 is P-channel MOS Field Effect Transistor designed

for high current switching applications.

FEATURES

• Super low on-state resistance:

RDS(on)1 = 11 m? MAX. (VGS = ?10 V, ID = ?42 A)

RDS(on)2 = 16 m? MAX. (VGS = ?4.0 V, ID = ?42 A)

• Low input capacitance:

Ciss = 7500 pF TYP. (VDS = ?10 V, VGS = 0 V)

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS ?60 V

Gate to Source Voltage (VDS = 0 V) VGSS m 20 V

Drain Current (DC) (TC = 25°C) ID(DC) m 83 A

Drain Current (pulse) Note1 ID(pulse) m 332 A

Total Power Dissipation (TC = 25°C) PT 160 W

Total Power Dissipation (TA = 25°C) PT 1.5 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg ?55 to +150 °C

Single Avalanche Current Note2 IAS ?50 A

Single Avalanche Energy Note2 EAS 250 mJ

Models : J607 TO-263 P

Manufacturer : NEC Corporation

Product Categories : Integrated Circuits (ICs), Transistor, MOSFET, MOS Field Effect Transistor

Package/Case : TO-263

Reference To Part : J607 TO-263

Substitute : J607

Package Include :

1 X J607 TO-263 P

Perum Puri Astapada Indah 2 Rt:08 Rw.03 Blok K No:6 

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