Original FDD5810 FDD5810 TO-252 N Chanel 60V 36A

Original FDD5810  FDD5810 TO-252 N Chanel 60V 36A Ecu Car

Original FDD5810  FDD5810 TO-252 Field Effect Transistor N-FET 60V 37A

FDD5810 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD5810

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 72 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 37 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 75 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Models : FDD5810 TO-252

Product Categories : Integrated Circuits (ICs), Transistor, Mosfet, Semiconductors

Package/Case : TO-252

Reference To Part : FDD5810 TO-252

Substitute : FDD5810 TO-252

Package included :

1 X FDD5810 TO-252

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